Effects of Tungsten Barrier on the Multi-State Storage Capability of Stacked-Chalcogenide Layers
Multi-state storage capability of phase change random access memory (PRAM) is attracting increasing attentions for its potential mass storage without additional cost. In this work, the stacked-chalcogenide layers were fabricated by sequentially stacking the chalcogenide layers with
different electrical conductivities, between which a metal layer acts as a barrier. Several resistance levels could be found on the resistance–voltage (R–V) curve, which indicates that the stacked chalcogenide layers exhibit multi-state storage capability. The internal metal
barrier plays a positive role in the performance improvements. Except prevent the atomic interdiffusion between the adjacent chalcogenide layers, the metal barrier strengthens the resistance stability of the middle storage states and also adjusts the programming margins of the middle storage
states by tuning barrier's thickness. Furthermore, we reveal that the improved performance is attributed to the positive influence of metal barrier on the thermal flux and the distribution of electrical potential in the stacked chalcogenide layers.
Document Type: Research Article
Publication date: 30 April 2012
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