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SrRuO3-Buffered 0.70Pb(Mg1/3Nb2/3–0.30PbTiO3 Thin Films

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The 0.70Pb(Mg1/3Nb2/3)–0.30PbTiO3 (PMN–PT) thin films were fabricated on the SrRuO3(SRO)/Pt/TiO2/SiO2/Si substrate. The effects of SRO buffer layer on the phase purity, fatigue, dielectric and ferroelectric properties of PMN-PT thin films were investigated. The SRO buffer layer acted as a barrier layer depresses the formation of pyrochlore phase, enhances ferroelectric properties (2P r = 42.6 μC/cm2 and 2E c = 146.2 kV/cm), and improves fatigue endurance of PMNT thin films. Moreover, large nonlinear dielectric properties (dielectric tunability = 42.2%) of the films were also observed in the SRO-buffered PMN-PT thin film.
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Document Type: Research Article

Publication date: March 1, 2012

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  • ADVANCED SCIENCE LETTERS is an international peer-reviewed journal with a very wide-ranging coverage, consolidates research activities in all areas of (1) Physical Sciences, (2) Biological Sciences, (3) Mathematical Sciences, (4) Engineering, (5) Computer and Information Sciences, and (6) Geosciences to publish original short communications, full research papers and timely brief (mini) reviews with authors photo and biography encompassing the basic and applied research and current developments in educational aspects of these scientific areas.
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