Growth of Nanopillars in SnO2 Thin Films by Ion Irradiation and Its Gas Sensing Properties
Nanocrystalline SnO2 thin films, grown by pulsed laser deposition (PLD) technique on Al2O3 substrates, were irradiated with 200 MeV Ag15+ ion beam. Atomic Force Microscopy (AFM), X-ray diffraction (XRD), UV-visible absorption studies were performed to study the morphology, structural, and optical properties of as-deposited and irradiated samples. The irradiated films show systematic evolution of nano-pillars like structures with increase in the irradiation fluence. It is observed that the size of nano-pillars increases in lateral as well as vertical direction with increasing irradiation fluence up to 5×1012 ions/cm2. The gas sensing response of SnO2 thin films was found to improve after formation of nano-pillar like structures on the film surface. Formation of nano-pillar like structures, changes in the structural and optical properties are also briefly discussed in the light of ion's energy and its energy loss processes.
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Document Type: Research Article
Publication date: February 1, 2011
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