On Optimization of Manufacturing of a Floating Point Multiplier Based on Heterostructures to Increase Density of Their Elements. Influence of Miss-Match Induced Stress and Porosity of Materials on Technological Process
In this paper we introduce an approach to increase density of field-effect transistors framework a floating point multiplier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should
be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatchinduced stress in the considered heterostructure. We introduce an analytical approach to analyze mass
and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
Keywords: FIELD-EFFECT HETEROTRANSISTORS; FLOATING POINT MULTIPLIER; MISMATCH-INDUCED STRESS; OPTIMIZATION OF MANUFACTURING; POROSITY OF MATERIALS OF HETEROSTRUCTURE
Document Type: Research Article
Publication date: 01 August 2017
- Advanced Science, Engineering and Medicine (ASEM) is a science, engineering, technical and medical journal focused on the publishing of peer-reviewed multi-disciplinary research articles dealing with all fundamental and applied research aspects in the areas of (1) Physical Sciences, (2) Engineering, (3) Biological Sciences/Health Sciences, (4) Medicine, (5) Computer and Information Sciences, (6) Mathematical Sciences, (7) Agriculture Science and Engineering, (8) Geosciences, and (9) Energy/Fuels/Environmental/Green Science and Engineering.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Ingenta Connect is not responsible for the content or availability of external websites
- Access Key
- Free content
- Partial Free content
- New content
- Open access content
- Partial Open access content
- Subscribed content
- Partial Subscribed content
- Free trial content