Lasing Characteristics of InGaP/GaAs Nanoscale Heterostructures

In this paper, we have theoretically investigated excellent lasing characteristics of In_0.45Ga_0.55P/GaAs nano-heterostructure such as, anti-guiding factor being responsible for material gain associated with the structure, differential gain, and refractive index change with respect to carrier density. In addition, the material gain spectra as a function of lasing wavelength and photonic energy within TE and TM modes have been computed and reported. Moreover, the effects of temperature on the optical properties of the heterostructure have also been investigated. Interestingly, the structure design has been found to have different behaviors at the above and below the room temperature conditions. The analysis shows that the material gain is found to increase with increase in temperature above room temperature; while below room temperature it is found to increase with decreasing temperature without shift in the lasing wavelength. The effects of temperature on anti-guiding factor and differential gain have also been studied. The analysis promises the utility of proposed structure in nano-optoelectronic applications.