Advanced SiC Power Modules for 13.8 kV Power Distribution
Northrop Grumman Corporation has been developing 10 kV SiC MOSFETs and Junction Barrier Schottky diodes for application to a 13.8 kV 2.7 MVA solid‐state power substation. The design of half‐bridge power modules has extensively used simulation, from electron‐level
device simulations to the system‐level trade studies, to develop the most efficient module for use in the SSPS.
Document Type: Research Article
Publication date: 01 November 2007
- The Naval Engineers Journal is the peer-reviewed journal of the American Society of Naval Engineers (ASNE). ASNE is the leading professional engineering society for engineers, scientists and allied professionals who conceive, design, develop, test, construct, outfit, operate and maintain complex naval and maritime ships, submarines and aircraft and their associated systems and subsystems.
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