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Abnormal reoxidation effects in Ba‐excess La‐doped BaTiO3 ceramics prepared by the reduction‐reoxidation method

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Ba‐excess La‐doped BaTiO3 ceramics have been successfully applied to prepare laminated chip thermistor. Ceramics were firstly fired in a high‐purity N2 flow and then reoxidized in air to obtain positive temperature coefficient of resistivity effect. However, an abnormal reduction trend of room‐temperature (RT) resistivity was found to be always beginning at ~800°C during reoxidation. This anomaly was found closely correlated with the insulating second phase (Ba2TiO4) at grain boundary, which destroyed conducting pathways between semiconducting BaTiO3 grains. When reoxidation temperature was up to ~800°C, the insulating Ba2TiO4 could be gradually consumed and then conducting pathways reestablished leading to RT resistivity reduction. To further prove the proposed explanation, the reoxidation effects of TiO2‐added ceramics were also studied, in which no Ba2TiO4 existed and certainly the abnormal RT resistivity reduction disappeared.
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Keywords: electrical properties; grain boundaries; oxidation resistance; positive temperature coefficient of resistivity

Document Type: Research Article

Publication date: July 1, 2017

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