Skip to main content
padlock icon - secure page this page is secure

Microwave Absorption of SiC/HfCxN1−x/C Ceramic Nanocomposites with HfCxN1−x‐Carbon Core–Shell Particles

Buy Article:

$52.00 + tax (Refund Policy)

The dielectric properties of high‐temperature stable single‐source precursor‐derived SiC/HfC x N1−x /C ceramic nanocomposites are determined by microwave absorption in the X‐band (8.2–12.4 GHz) at room temperature. The samples synthesized at 1700°C, denoted as SiC/5HfC x N1−x /C‐1700°C and SiC/15HfCxN1−x /C‐1700°C ceramics, comprising 1.3 and 4.2 vol% HfC x N1−x , respectively, show enhanced microwave absorption capability superior to hafnium‐free SiC/C‐1700°C. The minimum reflection loss of SiC/5HfC x N1−x /C‐1700°C and SiC/15HfC x N1−x /C‐1700°C are −47 and −32 dB, and the effective absorption bandwidth amount to 3.1 and 3.6 GHz, respectively. Segregated carbon, including graphitic carbon homogeneously dispersed in the SiC matrix and less ordered carbon deposited as a thin film on HfC x N1−x nanoparticles, accounts for the unique dielectric behavior of the SiC/HfC x N1−x /C ceramics. Due to their large reflection loss and their high chemical and temperature stability, SiC/5HfC x N1−x /C‐1700°C and SiC/15HfC x N1−x /C‐1700°C ceramics are promising candidate materials for electromagnetic interference applications in harsh environment.
No References
No Citations
No Supplementary Data
No Article Media
No Metrics

Keywords: Core–shell structures; dielectric materials/properties; microwaves; nanocomposites; silicon carbide

Document Type: Research Article

Publication date: August 1, 2016

  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more