Skip to main content
padlock icon - secure page this page is secure

Coupling Effect of Temperature and Stress on the Electronic Behavior of Amorphous SiAlCO

Buy Article:

$47.00 + tax (Refund Policy)

The electric conductivity of polymer‐derived amorphous silicoaluminum oxycarbide was measured as a function of temperature and pressure. The material exhibits typical amorphous semiconducting behavior, following band‐tail hopping process. The characteristic temperature of the BTH process increases with increasing pressure, indicating that the density of states in the band‐tail is changed by applying pressure. The piezoresistive stress coefficient of the material was calculated and increased with increasing temperature, which is different from other materials. It is found that such increase is due to the change in the characteristic temperature.
No References
No Citations
No Supplementary Data
No Article Media
No Metrics

Keywords: amorphous; polymer precursor; semiconductors

Document Type: Research Article

Publication date: June 1, 2016

  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more