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Domain Wall Motion in A and B Site Donor‐Doped Pb(Zr0.52Ti0.48)O3 Films

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Donor‐doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of dopants on the mobility of ferroelectric domain walls. For chemical solution deposited PZT films 2 μm in thickness, doped with 1%–4% Nb or La, the low field dielectric permittivity remained between 1100 and 1300. With increasing Nb concentration, both the reversible and irreversible Rayleigh constants increased from ɛ init and α′ of 1150 and 39 cm/kV, respectively, for undoped PZT films to 1360 and 43 cm/kV for films doped with 2 mol% Nb. La doping increased the irreversible Rayleigh constant but did not strongly affect the reversible Rayleigh parameter. These observations are consistent with softening of the dielectric and electromechanical response with donor doping.
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Document Type: Research Article

Publication date: September 1, 2012

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