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Influence of Bi2O3 Doping on Microstructure and Electrical Properties of ZnOV2O5MnO2Nb2O5 Varistor Ceramics

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This article is a report on the effect of Bi2O3 addition on microstructure and electrical properties of ZnOV2O5MnO2Nb2O5 varistor ceramics. The average grain size increased from 5.6 to 7.2 μm as the Bi2O3 amount increased. Increasing the amount of Bi2O3 decreased the breakdown field from 4874 to 2205 V/cm. The ceramics doped with 0.025 mol% Bi2O3 exhibited a surprisingly high nonlinear coefficient (α = 60) and very low leakage current density (J L = 20 μA/cm2). In addition, when the Bi2O3 amount increased, the donor concentration increased in the range of 2.38 × 1017−8.17 × 1017 cm−3 and the barrier height exhibited the highest value (1.12 eV) at 0.025 mol% Bi2O3.
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Document Type: Research Article

Publication date: July 1, 2012

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