Skip to main content
padlock icon - secure page this page is secure

Preparation and Electrical Properties of High‐TC Piezoelectric Ceramics of Strontium‐Substituted Bi(Ni1/2Ti1/2)O3PbTiO3

Buy Article:

$52.00 + tax (Refund Policy)

A piezoelectric system of (1−x)Bi(Ni1/2Ti1/2)O3x(Pb(1−y)Sr y TiO3) (BNT–PST) is developed to have good high temperature piezoelectric properties with much improved resistivity. The crystal structure shows that the phase transformation from tetragonal phase to rhombohedral one is gradually shifted to the composition with high content of PT by the substitution of strontium. The problem of leakage current for the Bi(Ni,Ti)O3PbTiO3 can be well resolved by introducing the dopant of strontium. Both dielectric loss and DC resistivity can be much reduced not only at room temperature but also high temperature. An optimum composition of 0.53Bi(Ni1/2Ti1/2)O3–0.47(Pb0.95Sr0.05)TiO3 is obtained to have a good potential application of high temperature piezoelectric (d 33 = 205 pC/N, E C = 3.32 kV/mm, P r = 41.2 μC/cm2). Strontium could be a useful dopant for the studies on the high temperature piezoelectric ceramics in future.
No References
No Citations
No Supplementary Data
No Article Media
No Metrics

Document Type: Research Article

Publication date: April 1, 2012

  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more