Zn and Ge co‐doped In2O3‐based ceramics have been prepared by the spark plasma sintering (SPS) technique. Microstructure studies show that dense and fine‐grained ceramic samples
can be obtained at low temperature sintered by SPS, and the grain size is about 100–300 nm. These In2O3‐based ceramics show higher electrical conductivity (~103 S/cm) as compared with the pure In2O3
(~50 S/cm). In addition, the samples also exhibited large power factor, especially the In1.98Zn0.01Ge0.01O3 sample ~ 7.5 × 10‐4 W/mK2. The evaluated maximum ZT value
is 0.20 at 973 K, which makes them promising materials to be used in thermoelectric devices.
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Document Type: Research Article
Publication date: August 1, 2011