Skip to main content
padlock icon - secure page this page is secure

Dielectric Breakdown of Thinned BaO–Al2O3–B2O3–SiO2 Glass

Buy Article:

$52.00 + tax (Refund Policy)

The dielectric breakdown behavior of alkali-free glass was determined as a function of thickness and surface roughness. The thickness of commercially available glass (as-received thickness=50 m) was reduced to a range of thicknesses between 47 and 5 m by chemical etching. The RMS surface roughness of the as-received glass was in the range of 0.14–0.47 nm, and the surface roughness increased to up 10 nm after etching; it was also found that agitating the etching solution by ultrasound reduced the overall surface roughness. The evaluation of these samples revealed that the dielectric breakdown strength increased as the thickness decreased. However, the Weibull modulus representing the distribution of dielectric strengths showed a dependence on the surface roughness of the etched glass. A power law dependence, EBdn, where d is the glass thickness and n=0.14 and 0.86, has been found to fit the data in the respective thickness ranges of 5–20 and 25–50 m. Self-healing behavior, which allows the dielectric to continue to support a high electric field after breakdown, was found to be more likely as the dielectric layer thickness decreased. The susceptibility to self healing was correlated with the stored electrostatic energy and latent heat of vaporization for the gold electrode material.
No References
No Citations
No Supplementary Data
No Article Media
No Metrics

Document Type: Research Article

Affiliations: Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802

Publication date: August 1, 2010

  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more