Dielectric Properties of Low-Firing Bi2Mo2O9 Thick Films Screen Printed on Al Foils and Alumina Substrates
Low-firing Bi2Mo2O9 thick films with a thickness of 15–20 m were screen printed on Al foils and alumina substrates by screen-printing technology. The phase evolution, morphologies, and dielectric properties of the thick films were investigated. The thick films showed a pure Bi2Mo2O9 phase at temperatures below 610°C. A mixture of Bi2MoO6, Bi2Mo3O12, and Bi2Mo2O9 phases was found in the thick films sintered at 610°C and higher temperatures. The Bi2Mo2O9 thick films on Al foils sintered at 645°C showed excellent dielectric properties with a relative permittivity of 38 and a dielectric loss of 0.7% at 5 MHz. At the microwave frequency range from 5 to 19 GHz, the Bi2Mo2O9 thick films on alumina substrates sintered at 645°C had a relative permittivity of ∼35 and Q×f of ∼12 500 GHz. It indicates that the Bi2Mo2O9 composition as potentially useful for low-temperature cofired ceramic using Al electrode.
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Document Type: Research Article
Affiliations: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China
Publication date: August 1, 2010