Ultra-Low Firing High-k Scheelite Structures Based on [(Li0.5Bi0.5)xBi1−x][MoxV1−x]O4 Microwave Dielectric Ceramics
In this work, dense ceramic samples across the solid solution of the [(Li0.5Bi0.5)xBi1−x][MoxV1−x]O4 system are prepared using the solid-state reaction process. The monoclinic phase region could be obtained for 0≤x<0.098 and the scheelite tetragonal solid solution region could be obtained for 0.098<x≤1. When x=0.098, the boundary composition [(Li0.5Bi0.5)0.098Bi0.902][Mo0.098V0.902]O4 could be readily sintered at 650°C and also have excellent microwave properties with a high relative permittivity of 81, and a Q×f value of 8000 GHz and a low temperature coefficient of +9.7 ppm/°C. This ceramic is chemically compatible with both Al and Cu electrode materials at its sintering temperature. It can be an excellent candidate for ultra-low-temperature co-fired ceramic technology and is the highest permittivity microwave material found to date with sintering considerations as low as 650°C.
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Document Type: Research Article
Center for Dielectric Studies, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China
Publication date: August 1, 2010