Effects of Ultrathin TiOx Seeding Layer on Crystalline Orientation and Electrical Properties of Sputtered (Ba,Sr)TiO3 Thin Films
A series of ultrathin TiOx (0–12 nm) seeded (Ba,Sr)TiO3 (BST) thin films have been prepared on Pt (111)/TiOx/SiO2/Si substrates by RF-magnetron sputtering. Experimental results show that an ultrathin TiOx layer acts as an initial template for the BST films in the first nucleation stage, resulting in a significant influence on crystalline orientation and electrical characteristics of the resultant BST films. Interestingly, highly (111) oriented BST film [α(111)∼97%] with 5-nm-thick TiOx seeding layer exhibits a shifted Curie temperature (Tc=275 K) and an enhanced tunability of 61.16% at 400 kV/cm, when compared with (001)-oriented BST without TiOx layer (Tc=250 K and tunability=50.05%).
No Supplementary Data
No Article Media
Document Type: Research Article
Affiliations: 1: Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China 2: IEMN-DOAE-MIMM Team, UMR CNRS 8520, 59655 Lille, France
Publication date: August 1, 2010