Improved Energy Storage Performance and Fatigue Endurance of Sr-Doped PbZrO3 Antiferroelectric Thin Films
Sr-doped PbZrO3 antiferroelectric (AFE) thin films have been fabricated on the platinum-buffered silicon substrates via the sol–gel technique. The temperature-dependent dielectric properties results indicated that the AFE phase was stabilized for the Sr-modified PbZrO3 thin films with a Curie temperature of 251°C. The recoverable energy density and energy efficiency of the Sr-doped PbZrO3 thin films were enhanced by the doping of strontium. Compared with the pure PbZrO3 AFE thin films, the performance against fatigue of the Sr-doped PbZrO3 thin films were also improved greatly.
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Document Type: Research Article
Affiliations: Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China
Publication date: May 1, 2009