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High Q Microwave Dielectric Ceramics in (Ni1−x Znx)Nb2O6 System

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(Ni1−xZnx)Nb2O6, 0≤x≤1.0, ceramics with >97% density were prepared by a conventional solid-state reaction, followed by sintering at 1200°–1300°C (depending on the value of x). The XRD patterns of the sintered samples (0≤x≤1.0) revealed single-phase formation with a columbite (Pbcn) structure. The unit cell volume slightly increased with increasing Zn content (x). All the compositions showed high electrical resistivity (dc=1.6±0.3 × 1011Ω·cm). The microwave (4–5 GHz) dielectric properties of (Ni1−xZnx)Nb2O6 ceramics exhibited a significant dependence on the Zn content and to some extent on the morphology of the grains. As x was increased from 0 to 1, the average grain size monotonically increased from 7.6 to 21.2 m and the microwave dielectric constant (′r) increased from 23.6 to 26.1, while the quality factors (Qu×f) increased from 18 900 to 103 730 GHz and the temperature coefficient of resonant frequency (f) increased from −62 to −73 ppm/°C. In the present work, we report the highest observed values of Qu×f=103 730 GHz, and ′r=26.1 for the ZnNb2O6-sintered ceramics.
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Document Type: Research Article

Affiliations: 1: Department of Metallurgical Engineering and Materials Science, IIT-Bombay, Powai, Mumbai 400076, India 2: Centre for Research in Nanotechnology and Science (CRNTS), IIT-Bombay, Powai, Mumbai 400076, India 3: National Institute for Interdisciplinary Science & Technology, Thiruvananthapuram 695019, India

Publication date: May 1, 2009

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