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Oxidation Resistance of Fully Dense ZrB2 with SiC, TaB2, and TaSi2 Additives

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Specimens of ZrB2 containing various concentrations of B4C, SiC, TaB2, and TaSi2 were pressureless-sintered and post-hot isostatic pressed to their theoretical densities. Oxidation resistances were studied by scanning thermogravimetry over the range 1150°–1550°C. SiC additions improved oxidation resistance over a broadening range of temperatures with increasing SiC content. Tantalum additions to ZrB2–B4C–SiC in the form of TaB2 and/or TaSi2 increased oxidation resistance over the entire evaluated spectrum of temperatures. TaSi2 proved to be a more effective additive than TaB2. Silicon-containing compositions formed a glassy surface layer, covering an interior oxide layer. This interior layer was less porous in tantalum-containing compositions.
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Document Type: Research Article

Affiliations: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245

Publication date: May 1, 2008

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