Skip to main content
padlock icon - secure page this page is secure

Equilibrium Dependence of the Conductivity of Pure and Tin-Doped Indium Oxide on Oxygen Partial Pressure and Formation of an Intrinsic Defect Cluster

Buy Article:

$52.00 + tax (Refund Policy)

The dependence of the electrical conductivity of pure (99.999%) and tin-doped indium oxide (In2O3) ceramics on oxygen partial pressure was investigated at 800° and 850°C. The doping amount of tin was 100–1000 ppm, which is within the solubility limit at the temperatures measured. The conductivity of doped ceramics was independent of , and the carrier concentration was almost the same as the estimated value from the tin content. The conductivity of the pure In2O3 ceramic was proportional to . By considering a singly charged defect cluster of interstitial indium and interstitial oxygen, , the conductivity dependence is deduced to be proportional to . There are large and three adjacent vacant sites, 8a and 16c, in the In2O3 structure to enter indium and oxygen.
No References
No Citations
No Supplementary Data
No Article Media
No Metrics

Document Type: Research Article

Affiliations: Department of Materials Science and Technology, Gifu University, Gifu 501-1193, Japan

Publication date: January 1, 2008

  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more