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Equilibrium Dependence of the Conductivity of Pure and Tin-Doped Indium Oxide on Oxygen Partial Pressure and Formation of an Intrinsic Defect Cluster

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The dependence of the electrical conductivity of pure (99.999%) and tin-doped indium oxide (In2O3) ceramics on oxygen partial pressure was investigated at 800° and 850°C. The doping amount of tin was 100–1000 ppm, which is within the solubility limit at the temperatures measured. The conductivity of doped ceramics was independent of , and the carrier concentration was almost the same as the estimated value from the tin content. The conductivity of the pure In2O3 ceramic was proportional to . By considering a singly charged defect cluster of interstitial indium and interstitial oxygen, , the conductivity dependence is deduced to be proportional to . There are large and three adjacent vacant sites, 8a and 16c, in the In2O3 structure to enter indium and oxygen.
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Document Type: Research Article

Affiliations: Department of Materials Science and Technology, Gifu University, Gifu 501-1193, Japan

Publication date: January 1, 2008

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