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Growth Kinetic and Characterization of RF-Sputtered ZnO:Al Nanostructures

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ZnO:Al nanostructures with 1% by mole of Al were prepared by radio frequency sputtering on copper and quartz substrates. The ZnO:Al nanostructures obtained exhibited needle- or tree-like structures with the diameter ranging from 30 to 100 nm. It was suggested that these ZnO:Al nanostructures could be single-crystalline hexagonal structures growing along the direction with branching along the 〈0001〉 direction. From Hall measurement, ZnO:Al nanostructures had a resistivity in the order of 10−2Ω·cm, a carrier concentration of 1020 cm−3, and a Hall mobility of 3 cm2·(V·s)−1. From X-ray diffraction, transmission electron microscopy and Raman results, ZnO:Al nanostructures had direction perpendicular to the surface, whereas ZnO nanobelts had the c-axis perpendicular to the surface. In addition, the growth mechanism of the wire and belt-like nanostructure could be explained by kinetics of anisotropic growth via a vapor–solid mechanism. This information would be useful for further applications of ZnO:Al nanostructures.
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Document Type: Research Article

Affiliations: 1: Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand 2: Department of Industrial Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand

Publication date: January 1, 2008

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