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Carbothermal Synthesis of α-SiC Micro-Ribbons

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We report the synthesis of microscopic α-SiC ribbons (belts) on the surface of a graphite rod at 1800°–1900°C by a carbothermal process. The width of the ribbons produced ranged from 500 nm to 5 m and the aspect ratio was up to 400. The ribbon thickness ranged from 50 to 800 nm. Their growth mechanism was explained by accelerated growth along the twin boundary. SiC whiskers grew on the rod along with the ribbons. Frequently, ribbons were growing from the tip of a whisker or whiskers were growing from the edge of a ribbon. SiC ribbons may find applications in high-temperature sensors, photo-electronic devices, or robust cantilevers in micro (or nano) electro mechanical systems. Alternatively, they can be used as reinforcements in composite materials, conferring anisotropic mechanical properties, such as unidirectional flexibility, to the composite.
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Document Type: Research Article

Affiliations: 1: Department of Materials Science and Engineering, Drexel University and A.J. Drexel Nanotechnology Institute, Philadelphia, Pennsylvania 19104 2: Frantsevich Institute for Problems of Materials Science NAS of Ukraine, Kiev 03142, Ukraine

Publication date: January 1, 2008

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