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Effects of Annealing on Dielectric Loss and Microstructure of Aluminum Nitride Ceramics

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The effect of annealing on tan  and microstructures of aluminum nitride (AlN) ceramics were explored. Yttria was added as a sintering additive to AlN powders, and the powders were pressureless-sintered at 1900°C for 2 h in a nitrogen flow atmosphere. In succession to sintering, AlN samples were annealed at 720, 970 and 1210°C for 2 and 4 h. Very low tan  values between 2.6 and 6.0 × 10−4 at 28 GHz were obtained when the AlN samples were annealed for 4 h at all the annealing temperatures.
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Document Type: Research Article

Affiliations: National Institute of Advanced Industrial Science and Technology (AIST) 2266-98 Anagahora, Moriyama-ku, Nagoya 463-8560, Japan

Publication date: November 1, 2005

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