Skip to main content
padlock icon - secure page this page is secure

Effect of Stacking Layers on the Microwave Dielectric Properties of MgTiO3/CaTiO3 Multilayered Thin Films

Buy Article:

$52.00 + tax (Refund Policy)

Effect of stacking layers on the microwave dielectric properties of the MgTiO3/CaTiO3 (MTO/CTO) multilayered thin films prepared by the metalorganic solution deposition technique (MOSD) was investigated. As the thickness of CTO film in the MTO/CTO multilayered films increased, the dielectric constant (K) increased and temperature coefficient of dielectric constant (TCK) changed from positive to negative values by dielectric series mixing rule. Especially, MTO(100 nm)/CTO(200 nm) multilayered films exhibited a TCK of +10 ppm/°C, indicating temperature stability. The dielectric losses (tan ) of MTO/CTO multilayered films increased with an increase of CTO layers. This result was attributed to the fact that the stresses induced by the higher thermal-expansion coefficient of CTO than that of MTO. Also, as compared with MTO(100 nm)/CTO(200 nm) film, the K and TCK of MTO(50 nm)/CTO(200 nm)/MTO(50 nm) film were not changed, but the dielectric losses increased. This result indicated that the dielectric loss was affected by the number of interfaces between CTO and MTO layers.
No References
No Citations
No Supplementary Data
No Article Media
No Metrics

Document Type: Research Article

Affiliations: 1: Department of Ceramic Engineering, Yonsei University, Seoul 120-749, Korea 2: Department of Electronic Materials Engineering, University of Suwon, Suwon 440-600, Korea

Publication date: May 1, 2005

  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more