# Nonlinear absorption and refraction in crystalline silicon in the mid‐infrared

\$59.00 + tax

The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between $2.75\phantom{\rule{0.16em}{0ex}}\mu$m and $5.5\phantom{\rule{0.16em}{0ex}}\mu$m as well as at $1.55\phantom{\rule{0.16em}{0ex}}\mu$m have been measured. It was found that at all wavelengths multi‐photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid‐infrared that require strong nonlinear response, such as for the generation of a supercontinuum. The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between 2.75 μm and 5.5 μm as well as at 1.55 μm have been measured. It was found that at all wavelengths multi‐photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid‐infrared that require strong nonlinear response, such as for the generation of a supercontinuum.
No References
No Citations
No Supplementary Data
No Article Media
No Metrics

Document Type: Research Article

Publication date: November 1, 2013

• Access Key
• Free content
• Partial Free content
• New content
• Open access content
• Partial Open access content
• Subscribed content
• Partial Subscribed content
• Free trial content
X