Skip to main content
padlock icon - secure page this page is secure

Nonlinear absorption and refraction in crystalline silicon in the mid‐infrared

Buy Article:

$59.00 + tax (Refund Policy)

The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between 2.75μm and 5.5μm as well as at 1.55μm have been measured. It was found that at all wavelengths multi‐photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid‐infrared that require strong nonlinear response, such as for the generation of a supercontinuum. The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between 2.75 μm and 5.5 μm as well as at 1.55 μm have been measured. It was found that at all wavelengths multi‐photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid‐infrared that require strong nonlinear response, such as for the generation of a supercontinuum.
No References
No Citations
No Supplementary Data
No Article Media
No Metrics

Keywords: Silicon photonics; mid‐infrared; multi‐photon absorption; nonlinear

Document Type: Research Article

Publication date: November 1, 2013

  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more