Silicene Transistors: Silicon-based Nanoelectronics from a Single Atom Layer
The discovery of graphene, a single-atom thin sheet of carbon, led to the worldwide race for the discovery of similar two-dimensional materials of other elements, especially of common semiconductor materials such as silicon and germanium. Although graphene may be electrically the most conductive material, it is not suitable for making a transistor because of the lack of an energy band gap. In contrast, silicene and germanene, single-atom layers of silicon and germanium, pose a small band gap that can be used for making nanoelectronic transistors. A recent work has demonstrated the proof of concept of this transistor, which is made of a single layer of silicon atoms.
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Document Type: Research Article
Publication date: November 1, 2014
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- Micro and Nanosystems publish significant original work, topical reviews and guest edited issues ranging from technologies and systems to product innovation and new manufacturing processes with features at the micro and nanoscale. Applications for micro and nanosystems in areas such as health, environmental, food, security and consumer goods will be covered. The topics to be addressed will include Lab-on-a-chip, microfluidics, nano-biotechnology, micro and nanomanufacturing, printed electronics and MEMS.
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