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Open Access DP4T RF CMOS Switch: A Better Option to Replace the SPDT Switch and DPDT Switch

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In this paper we have explored the design of double-pole four-throw (DP4T) RF CMOS switch at 45-nm technology and analyzed the better drain current and switching speed as compared to the existing single-pole double-throw (SPDT) switch and double-pole double-throw (DPDT) switch. For the proposed DP4T RF CMOS switch results the peak output currents around 0.387 mA and switching speed of 36 ps. We are using the CMOS inverter propertied to some extent to design this DP4T switch. This article deals with the evolution of RF switches and its design through reviewing available patents and introduces the latest applications of proposed switch.
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Keywords: DP4T switch; RF CMOS switch; VLSI; single-gate MOSEFT

Document Type: Research Article

Publication date: December 1, 2012

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  • Recent Patents on Electrical & Electronic Engineering publishes review and research articles, and guest edited thematic issues on recent patents in electrical and electronic engineering. A selection of important and recent patents on electrical and electronic engineering is also included in the journal. The journal is an essential reading for all researchers involved in electrical and electronic engineering science. The journal also covers recent research (where patents have been registered) in fast emerging applications of electrical power supply, electrical systems, power transmission, electromagnetism, motor control process and technologies involved and related to electrical and electronic engineering.
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