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The Effect of a Metallic Layer on Energetic States of Quantum Dots

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The simulation of energetic states of electron and hole quasiparticles in semiconductor nanostructure is still an important issue for future electronic and optical devices. In this study a peculiar configuration of three-dimensional confinement of electrons into a spherical island of carbon, the quantum dot, embedded in a semiconductor substrate (GaAs) was considered. It was analyzed the effect of a metallic layer, deposited under the semiconductor substrate, on the energetic states of confined electrons. In order to characterize the electrons energy, the effective-mass Schrödinger equation was solved using a finite element method for geometry discretization considering the one-band model approximation. The occurrence of oscillations of the envelope function for electrons from the metallic layer, simultaneous with an energy transfer between dot and metallic layer was predicted.

Keywords: ENERGETIC STATES; NANODEVICES; QUANTUM DOT

Document Type: Research Article

Publication date: March 1, 2007

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