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The Effect of a Metallic Layer on Energetic States of Quantum Dots

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The simulation of energetic states of electron and hole quasiparticles in semiconductor nanostructure is still an important issue for future electronic and optical devices. In this study a peculiar configuration of three-dimensional confinement of electrons into a spherical island of carbon, the quantum dot, embedded in a semiconductor substrate (GaAs) was considered. It was analyzed the effect of a metallic layer, deposited under the semiconductor substrate, on the energetic states of confined electrons. In order to characterize the electrons energy, the effective-mass Schrödinger equation was solved using a finite element method for geometry discretization considering the one-band model approximation. The occurrence of oscillations of the envelope function for electrons from the metallic layer, simultaneous with an energy transfer between dot and metallic layer was predicted.


Document Type: Research Article

Publication date: March 1, 2007

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