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Peculiar Photoluminescence Properties of Strained In x Ga1–x N/GaN Multiple-Quantum Wells: Experiment and Theory

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Combined experimental and computational efforts are focused to investigate the power-dependent micro-photoluminescence (μPL) properties of In x Ga1–x N/GaN multiple-quantum wells (MQWs). High-quality hexagonal In x Ga1–x N/GaN[0001] MQWs were successfully grown using plasma-assisted molecular-beam epitaxy (PA-MBE), with multiplicity of 1, 3 and 5. Characterizations methods based on scanning tunneling electron microscopy (STEM) and PL indicated that each period is composed of 10 nm GaN barrier and 2.5 nm In x Ga1–x N well with x ≤ 0.12. In power (ranging from 0.008 mW to 8 mW) dependent micro-photoluminescence (μPL) measure at room temperature, blue shifts of about 11.11 nm, 11.94 nm and 14.94 nm were observed corresponding to the single-quantum well (1-QW), 3-MQW, and 5-MQW, respectively. Experimental observations were further verified by simulations based on 3D tight-binding method using simple sp 3-basis set. The theoretical results show that larger blue-shift in 5-MQW sample to be attributed to higher bi-axial strain and interface-specific effects with a further increase of the hole well's (h-Well) depth, Vh 0, and increase in number of localized hole states within the h-Well. Furthermore, this study reveals role of bi-axial strain, well composition, and interface specific effects on the peculiar behaviors of valence-band offset (VBO) in In x Ga1–x N/GaN MQWs.
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Document Type: Research Article

Publication date: July 1, 2018

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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