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Optoelectronic Characterizations of Two-Dimensional h-BN/MoSe2 Heterostructures Based Photodetector

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Thanks to their unique physical properties, two-dimensional (2D) material based electronic and optoelectronic devices have attracted much attention. In this paper, we studied metal-oxide-semiconductor field-effect transistors (MOSFETs) based on two-dimensional materials. The designed MOSFET consists of multiple layers of hexagonal boron nitride (h-BN) and molybdenum diselenide (MoSe2) as insulator and active layers, respectively. Both 2D materials were deposited using a mechanical exfoliation technique. Electrical and optoelectronic characterizations were carried out; the MOSFET showed good gate controllability and exhibited high photoresponsivity and a specific detectivity of 42 m · A · W–1 and 6.22 × 109 cm · Hz0.5 · W–1, respectively, which make this new device promising for photodetection applications.


Document Type: Research Article

Publication date: May 1, 2018

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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