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Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors

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In this study, we analyzed the effect of post-annealing on solution-processed indium oxide thin-film transistors (TFT) with the aim of achieving high performance while taking advantage of the low processing temperatures. Before post-annealing, the indium oxide film does not show TFT channel characteristics and has no on/off ratio. However, after post-annealing, the device has the characteristics of high-performance TFTs, namely a high mobility (18.01 cm2 V–1 s–1), an on/off current ratio of ∼105, and a threshold voltage of –1.91 V. The post-annealing effect was assessed by combining analytical methods such as X-ray photoemission spectroscopy and current–voltage measurements on films with different contact metals and post-annealed under different atmospheric conditions. Based on our experimental results, we suggest that the post-annealing effect, which involves a reduction in carrier concentration, originates with the loss of oxygen vacancies in the contact region by absorbing the oxygen present in the annealing atmosphere.

Keywords: CARRIER CONCENTRATION; INDIUM OXIDE; LOW-TEMPERATURE; OXYGEN VACANCY; POST-ANNEALING; SOLUTION-PROCESS; THIN-FILM TRANSISTOR

Document Type: Research Article

Publication date: April 1, 2018

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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