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Effects of Bending Stress on 6,13-Bis(triisopropylsilylethynyl) Pentacene (TIPS-PEN)-Based Organic Thin-Film Transistors

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We have fabricated highly flexible 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) thin-film transistors with poly(methylmethacrylate)/Al2O3 bilayer gate dielectrics on plastic films with a mobility of 0.04 cm2/Vs, and have measured their electrical properties under compressive strain and tensile strain. We investigated the effect of bending strain on the devices under two different conditions that induce strain: one in which the device was bent after TIPS-PEN was deposited on a flat substrate and the other in which the device was flattened after TIPS-PEN was deposited on a bent substrate. Both compressive strain and tensile strain were found to lead to an increase in the on current and mobility for both types of devices but the magnitudes of the changes in the on current and mobility were different for each device. In addition, the strain-induced changes were observed to be irreversible.
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Document Type: Short Communication

Publication date: December 1, 2017

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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