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Characteristics of Quaternary Flexible Mg and Ga Co-Doped ZnO Thin Films Fabricated Using RF Magnetron Sputtering

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Mg and Ga co-doped ZnO (MGZO) thin films with transparent conductive characteristics and low resistivity have been fabricated using a radio frequency (RF) magnetron sputtering process. Doped ZnO thin films with 0.5 at.% Mg and 0.3 at.% Ga were grown based on our previous investigation on polyethylene terephthalate substrates (PET) using different sputtering powers from 50 to 150 W. The influence of the various sputtering powers on the structural, morphological, compositional, optical and electrical properties of the MGZO thin films were investigated. X-ray diffraction patterns show that all of the films had a hexagonal wurtzite ZnO structure with a c-axis preferential growth. The MGZO thin films had directional uniform morphologies. The optical properties of the MGZO thin films demonstrated a high transmittance of approximately 80% and a band gap energy of 3.58 eV. The resistivity, the mobility and the carrier concentration of the MGZO thin films varied gradually from 2.4 × 10–2 to 3.7 × 10–3 Ωcm, 1.23 to 5.0 cm2/Vs and 1.91 × 10–20 to 2.51 × 10–20/cm3, respectively, with an increase in the sputtering power.
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Document Type: Research Article

Publication date: March 1, 2016

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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