@article {Bayam:2015:1947-2935:211,
title = "Synthesis of Ga2O3 Nanorods with Ultra-Sharp Tips for High-Performance Field Emission Devices",
journal = "Science of Advanced Materials",
parent_itemid = "infobike://asp/sam",
publishercode ="asp",
year = "2015",
volume = "7",
number = "2",
publication date ="2015-02-01T00:00:00",
pages = "211-218",
itemtype = "ARTICLE",
issn = "1947-2935",
url = "https://www.ingentaconnect.com/content/asp/sam/2015/00000007/00000002/art00002",
doi = "doi:10.1166/sam.2015.2160",
keyword = "GALLIUM OXIDE, FIELD ENHANCEMENT FACTOR, NANOROD, FIELD EMISSION",
author = "Bayam, Yavuz and Logeeswaran, V. J. and Katzenmeyer, Aaron M. and Sadeghian, Ramin Banan and Chacon, Rebecca J. and Wong, Michael C. and Hunt, Charles E. and Motomiya, Kenichi and Jeyadevan, Balachandran and Islam, M. Saif",
abstract = "We synthesized catalyst-free -Ga2O3 nanorods with terminated ultra-sharp tips by heat treating single crystalline GaAs in a chemical vapor deposition (CVD) chamber without introducing a precursor. The unique, straight-forward, synthetic route and a
possible growth mechanism are discussed to explain the different morphology of the grown nanorods and the ultra-sharp nanostructures. The morphology and structure of the nanorods were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction
(XRD) and Raman-spectroscopy. The ultra-sharp tips were found to have radii of 35 nm and were utilized to achieve enhanced field emission. The field emission characteristics demonstrated a turn-on field of 2.1 Vm1, a threshold electric field of 5.6
Vm1, and a geometrical field enhancement factor of 3786, making them comparable to nanostructured diamond and highly oriented single wall carbon nanotubes.",
}