Large-Area Quantum-Dot Light Emitting Diode Arrays with ZnO Nanoparticles as Electron Transport/Injection Layer
This paper reports the large area quantum dots light emitting diodes (QLEDs) that are composed of CdSe/ZnS core/shell quantum dots (QDs) as the light emitting layer (EML), ZnO nanoparticles (NPs) as the electron transport/injection layer (ETL) and organic polymers as the hole transport layer (HTL). By varying the thickness of ETL and EML, the performance of these QLEDs can be tailored/optimized accordingly, which is due to the different injection rate of the holes and electrons caused by the different thicknesses of ZnO and QDs layers. By adjusting the thicknesses of the constituent layers, large area QLED devices (10 cm × 10 cm active area, 32 × 32 pixels) are uniformly developed with decreased leakage current, improved electroluminance efficiency (1∼1.8 cd/A), low turn-on voltages (2∼3.2 V) and saturated emission with the Commission Internationale de l'Enclairage (CIE) coordinates of (0.5134, 0.4868). This is attributed to the better electro-optical device design with well balanced carrier conduction, reduced quenching of QDs emission, and enhanced recombination.
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Document Type: Research Article
Publication date: December 1, 2014
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