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A Simple Method for Production of High Aspect Ratio ZnO Nanowires with Uniform Structure for NO2 Gas Sensors

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Semiconducting thin films consist of high aspect ratio ZnO nanowires with a uniform structure were prepared through thermal evaporation and vapor transportation of a mixture of highly pure ZnO and graphite powders in 1:1 weight ratio. The mixture was heated at 1100 °C under various flow rates of N2 and air mixture. The surface morphology and structural characteristics of synthesized ZnO nanowires revealed a highly crystalline structure with an average diameter of about 30 nm and length of several micrometers. For sensing properties, ZnO nanowires were coated on the Pt interdigitated microelectrodes arrays and examined at operating temperatures of 150 and 350 °C for the detection capacity of NO2 gas. The changes in response resistance revealed that the sensor exhibited a high sensing performance for low concentrations of NO2 gas (0.5 ppm).
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Document Type: Research Article

Publication date: 01 August 2014

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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