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Fabrication of Germanium Nanowire Arrays by Block Copolymer Lithography

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Germanium nanowires (GeNWs) have importance in emerging device applications because of their high hole mobility. Reported here is the fabrication of GeNWs on a SiO2 insulator substrate from a phase separated lamellar PS-b-PMMA block copolymer (BCP) by a simple and reproducible method. The parent BCP film was selectively etched to remove PMMA block generating PS template which was then used to fabricate GeNWs using a thermal evaporation technique. XRD, Raman and TEM cross-section analysis reveal the formation of GeNWs on SiO2 substrates. Thermal treatment of the GeNWs was used to probe thermal stability and crystallisation properties. It was observed that thermal treatment of GeNWs resulted in red-shifts in the Raman spectra. The results demonstrate an exciting nanofabrication technique for creating high density nanowires for the nanoelectronic industry.


Document Type: Research Article

Publication date: July 1, 2013

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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