Amorphous TiO2 (a-TiO2) films were deposited on p-type silicon (p-Si) substrates by ALD using TDMAT and H2O as a Ti and O source, respectively, to fabricate the a-TiO2/p-Si heterojunction photodiode. The electrical and
optical properties of the as-deposited a-TiO2 films on p-Si substrates by the ALD method have been investigated with annealing treatment effects. In order to understand the charge density and mobility that vary depending on the deposition temperature, the chemical composition
of ALD TiO2 was examined by XPS and I–V characteristics. a-TiO2 prepared by ALD at low process temperature has exhibited nonstoichiometric TiO2−x and n-type semiconducting properties, while majority carrier of positive
hole increases as increasing growth temperature. The photocurrent was 10−6 A for UV and 10−7 A for visible light, while the dark current was 10−8 A for the ALD TiO2 diode. After heat treatment, the photocurrent for visible light
and UV remarkably decreased, indicating that heat treatment has a negative effect and degrades the optical absorption of TiO2 film.
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Atomic Layer Deposition;
Document Type: Research Article
Innovation Center for Chemical Engineering, Incheon National University, Incheon 22012, Korea
Department of Material Science Engineering, Incheon National University, Incheon 22012, Korea
School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Korea
May 1, 2018
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Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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