Undoped and N-doped TiO2 films were successfully deposited by atomic layer deposition on planar silicon substrates using TDMAT and NH4OH as precursors. The nitrogen concentrations in the films were varied by using different concentrations of NH4OH solution,
which was used as a source of both oxygen and nitrogen dopants for the preparation of N-doped TiO2. The surface wettability properties of the N-doped TiO2 films were examined as a function of the incorporated nitrogen concentration. A change in the wettability of the
oxide surface was observed when the N-doped TiO2 film surfaces were exposed to UV light. The surface wettability investigations showed that the N-doped TiO2 films exhibited superhydrophilicity under UV irradiation. The contact angles of all the TiO2 thin films
decreased to values less than 20° under UV irradiation, indicating that the surfaces became more hydrophilic. This behavior is attributed to the photo-generation of electrons and holes on the surface of the N-doped TiO2 films during UV irradiation.
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Atomic Layer Deposition;
Document Type: Research Article
Department of Materials Science and Engineering, Incheon National University, Incheon 22012, Korea
School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Korea
May 1, 2018
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Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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