Nanoscience and Nanotechnology Letters

A Special Issue on Nanoelectronics
pp. 727-728(2)
Authors: Chen, T. P.; Liu, Yang; Fu, Richard Yongqing

Review of Nanostructured Resistive Switching Memristor and Its Applications
pp. 729-757(29)
Authors: Hu, S. G.; Wu, S. Y.; Jia, W. W.; Yu, Q.; Deng, L. J.; Fu, Y. Q.; Liu, Y.; Chen, T. P.

Magnetic Nanocomposites Through Polyacrylamide Gel Route
pp. 758-771(14)
Authors: Wang, S. F.; Lv, H. B.; Zhou, X. S.; Fu, Y. Q.; Zu, X. T.

Shape Memory Polymer Nanocomposites: Nano-Reinforcement and Multifunctionalization
pp. 772-786(15)
Authors: Lu, Haibao; Lei, Ming; Yao, Yongtao; Yu, Kai; Fu, Y. Q.

A MEMS Capacitive Inertial Sensor with Near Nanoscale Capacitance Plate Spacing
pp. 787-793(7)
Authors: Dong, Linxi; Pan, Ying; Su, Chuntang; Wang, Xiaodi

Influence of Trap State Effects on Buffer Leakage Current and Breakdown Voltage in Nano-Channel AlGaN/GaN DHFETs
pp. 794-797(4)
Authors: Du, JiangFeng; Bai, ZhiYuan; Ma, Kunhua; Yu, Qi

An Experimental Study of Lateral Charge Transfer in Silicon Nanocrystal Layer Embedded in SiO₂ Thin Film
pp. 798-804(7)
Authors: Wong, J. I.; Chen, T. P.; Tay, Y. Y.; Liu, P.; Yang, M.; Liu, Z.; Yang, H. Y.

Design and Optimization of a Milli-Meter Wave Amplifier Using Nano-Scale CMOS Devices
pp. 805-811(7)
Authors: Xu, Wen Lin; Yu, Xiao Peng; Lim, Wei Meng; Yeo, Kiat Seng

A Ka-Band 150 nm GaAs pHEMT Power Amplifier Monolithic Microwave Integrated Circuit with Novelly Designed Output Power Combining Networks
pp. 812-816(5)
Authors: Wu, Wenguang; Gu, Jiangmin; Wang, Xiaoying; Yao, Feijie; Sui, Wenquan

A 180 nm Technology New 2.5 Gbps Burst-Mode Optical Receiver Design with Automatic Gain Control and Feed-Forward Created Reset
pp. 817-824(8)
Authors: Siek, Liter; Duan, Lian; Lim, Wei Meng

A Novel High-Voltage GaN Current Aperture Vertical Electron Transistor with Polarization-Doped Current Blocking Layer
pp. 825-829(5)
Authors: Zhao, Ziqi; Du, Jiangfeng; Zhao, Ziyu; Luo, Qian

Design Optimization of Nanoscale AlGaN/GaN HEMTs with Composite Metal Gate Structure for Millimeter-Wave Application
pp. 830-834(5)
Authors: Du, Jiangfeng; Pan, Peilin; Yan, Hui; Yu, Qi

Al Content–Dependent Resistive Switching in Al-Rich AlO_xN_y Thin Films
pp. 835-839(5)
Authors: Zhu, W.; Chen, T. P.; Liu, Y.; Liu, Z.

A Concise Numerical TID Radiation Model for n-MOSFET with Nano-Scaled LOCOS Isolation Under Zero Gate Bias
pp. 840-844(5)
Authors: Wang, Xiangzhan; Huang, Jianguo; Wang, Kai; Zou, Xi; Luo, Qian; Yu, Qi; Luo, Muchang; Li, Yudong

Influence of the Excess Al Content on Memory Behaviors of WORM Devices Based on Sputtered Al-Rich Aluminum Oxide Thin Films
pp. 845-848(4)
Authors: Liu, Z.; Liu, P.; Li, H. K.; Chen, T. P.

An Ultra-Low Power Successive-Approximation-Register Analog-to-Digital Converter with Input-Referred Amplifier-Skipping Window Technique in 55 nm Low-Leakage Process
pp. 849-855(7)
Authors: Wu, Shuangyi; Wang, Zhengfeng; Ning, Ning; Du, Ling; Yu, Qi

A High Q Gm-C Filter with On-Chip Automatic Tuning Circuit Implemented in Nano-Scale CMOS Process
pp. 856-860(5)
Authors: Kuang, Xiao Fei; Guo, Chenxu; Cheng, Yuhua; Wang, Hengyi

Self-Consistent Results for the 2DEG in a Quantized Triangular Well
pp. 861-864(4)
Authors: Luo, Qian; Yu, Qi