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Electrical Characteristics of ITO/MEH–PPV/ZnO/Al Structure

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The electrical characteristics of ITO/MEH–PPV (poly-[2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylenevinylene])/ZnO/Al structure device were studied. IV characteristics of the device show stable rectifying diode behaviour with large current. Based on this result, a carrier tunneling process mechanism and injection and transport mechanism are suggested to explain the phenomenon. The results show that the MEH–PPV/ZnO thin film gives good performance and is relevant for applications in optoelectronic such as a light-emitting diode.
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Document Type: Short Communication

Publication date: March 1, 2014

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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