Electrical Characteristics of ITO/MEH–PPV/ZnO/Al Structure
The electrical characteristics of ITO/MEH–PPV (poly-[2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylenevinylene])/ZnO/Al structure device were studied. I–V characteristics of the device show stable rectifying diode behaviour with large current. Based on this result, a carrier tunneling process mechanism and injection and transport mechanism are suggested to explain the phenomenon. The results show that the MEH–PPV/ZnO thin film gives good performance and is relevant for applications in optoelectronic such as a light-emitting diode.
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Document Type: Short Communication
Publication date: March 1, 2014
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