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Study of Dislocation Nucleation Mechanism in Nanoindentation Process

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Molecular dynamics simulations method is used to simulate nano-indentation process of single crystal copper. The improved centro symmetry parameters (ICSP) and radial distribution function (RDF) method are used to analyze the dislocation nucleation mechanism and defects evolution mechanism of workpiece during nano-indentation process. The simulation results show that: during nano-indentation process, the dislocation nucleate and launch near the stacking atoms at the interface between the indenter and workpiece, expand along the slip plane and terminated on the profile-surface of the workpiece. In the sub-surface of the workpiece, there are stacking atoms, partial dislocation and stacking fault, and we found that the formation of partial dislocations half-loops. To our interested that we find a "V" shape dislocation loop in the simulation and study its formation mechanism. In addition, we also study impact of the indentation depths on the dislocation nucleation mechanism and the atomic spatial order degree.
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Document Type: Short Communication

Publication date: May 1, 2013

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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