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Charging Behaviour of Metal-Nitride-Oxide-Semiconductor Memory Structures with Embedded Si or Ge Nanocrystals

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Charging behaviour of MNOS structures containing semiconductor nanocrytals embedded at the SiO2/Si3N4 interface are studied by calculating tunneling probabilities of electrons and holes to the nanocrystals or to the conductance or valence band of the nitride layer, respectively, for structures with and without nanocrystals. The dependence of probability on the oxide thickness and electric field is discussed in terms of charge injection mechanisms. It is concluded that the optimal charging behaviour of MNOS and SONOS structures without nanocrystals can be expected for an oxide thickness of 2–3 nm. The presence of semiconductor nanocrystals at the SiO2/Si3N4 interface enhances strongly the tunneling probability of electrons and holes for structures with thin oxide layers (3 nm or below) or at low electric fields, but they do not influence the charging behaviour of structures with thick oxide layers at high electric fields. The results of calculations are in agreement with the experimental results obtained on MNOS structures with Si or Ge nanocrystals.
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Keywords: MNOS; SEMICONDUCTOR NANOCRYSTALS; SONOS; TUNNELING PROBABILITY

Document Type: Short Communication

Publication date: April 1, 2013

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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