@article {Kulbachinskii:2012:1941-4900:634,
title = "Anomalous Hole Transport and Ferromagnetism in Doped with Mn GaAs/InGaAs/GaAs Quantum Well or GaAs/InAs/GaAs Quantum Dot Layer",
journal = "Nanoscience and Nanotechnology Letters",
parent_itemid = "infobike://asp/nnl",
publishercode ="asp",
year = "2012",
volume = "4",
number = "6",
publication date ="2012-06-01T00:00:00",
pages = "634-640",
itemtype = "ARTICLE",
issn = "1941-4900",
url = "https://www.ingentaconnect.com/content/asp/nnl/2012/00000004/00000006/art00011",
doi = "doi:10.1166/nnl.2012.1359",
keyword = "DILUTED MAGNETIC SEMICONDUCTORS, INAS QUANTUM DOTS, DELTA-MN DOPING, GAAS/IN0.17GA0.83AS/GAAS QUANTUM WELL, FERROMAGNETISM",
author = "Kulbachinskii, V. A. and Gurin, P. V. and Oveshnikov, L. N.",
abstract = "Transport, magnetotransport and magnetic properties of structures with GaAs/In0.17Ga0.83As/GaAs quantum well (QW) or GaAs/InAs/GaAs quantum dot (QD) layer in GaAs have been measured in the temperature interval 4.2 < T < 300 K. The structures were -doped
by Mn to provide magnetic properties and by carbon to enhance p-type conductivity. The ferromagnetic phase up to 400 K was detected by SQUID magnetometer. Anomalous Hall-effect and negative magnetoresistance was observed at low temperatures. The role of additional disorder in conducting
channel for samples with conducting QD layer was investigated. It is shown a principal role of fluctuation potential of Mn layer separated from conducting layer (QW or QD layer) by spacer in anomalous transport properties of structures. The reasons for occurrence of negative magnetoresistance
are explained as the reduction of the spin-flip scattering by aligning spins by magnetic field.",
}