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Anomalous Hole Transport and Ferromagnetism in Doped with Mn GaAs/InGaAs/GaAs Quantum Well or GaAs/InAs/GaAs Quantum Dot Layer

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Transport, magnetotransport and magnetic properties of structures with GaAs/In0.17Ga0.83As/GaAs quantum well (QW) or GaAs/InAs/GaAs quantum dot (QD) layer in GaAs have been measured in the temperature interval 4.2 < T < 300 K. The structures were δ-doped by Mn to provide magnetic properties and by carbon to enhance p-type conductivity. The ferromagnetic phase up to 400 K was detected by SQUID magnetometer. Anomalous Hall-effect and negative magnetoresistance was observed at low temperatures. The role of additional disorder in conducting channel for samples with conducting QD layer was investigated. It is shown a principal role of fluctuation potential of Mn layer separated from conducting layer (QW or QD layer) by spacer in anomalous transport properties of structures. The reasons for occurrence of negative magnetoresistance are explained as the reduction of the spin-flip scattering by aligning spins by magnetic field.
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Keywords: DELTA-MN DOPING; DILUTED MAGNETIC SEMICONDUCTORS; FERROMAGNETISM; GAAS/IN0.17GA0.83AS/GAAS QUANTUM WELL; INAS QUANTUM DOTS

Document Type: Short Communication

Publication date: June 1, 2012

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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