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Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires

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We report our work on the characterization by electrically detected magnetic resonance (EDMR) measurements of silicon nanowires (SiNWs) produced by different top-down processes. SiNWs were fabricated starting from SOI wafers using standard e-beam lithography and anisotropic wet etching or by metal-assisted chemical etching. Further oxidation was used to reduce the wire cross section. Different EDMR implementations were used to address the electronic wave function of donors (P) and to characterize point defects at the SiNWs/SiO2 interface. The EDMR spectra of as produced SiNWs with high donor concentration ([P] = 1018 cm−3) show a single line related to delocalized electrons. SiNWs produced on substrates with lower donor concentration ([P] < 1016 cm−3) reveal the doublet related to substitutional P in Si, as well as lines related to interfacial defects such as Pb0, Pb, E', and E'-like. The EDMR spectra of samples produced by metal-assisted chemical etching exposed to post production oxidation reveal a disordered and defective interface and the disappearance of the P related signal. Forming gas annealing, on the other hand, reduces the contribution of interfacial defects and allows a better resolution of the P related doublet.
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Document Type: Short Communication

Publication date: August 1, 2011

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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