@article {Zhang:2018:2158-5849:105,
title = "High-performance solar-blind photodetector with graphene and nitrogen-doped reduced graphene oxide quantum dots (rGOQDs)",
journal = "Materials Express",
parent_itemid = "infobike://asp/me",
publishercode ="asp",
year = "2018",
volume = "8",
number = "1",
publication date ="2018-02-01T00:00:00",
pages = "105-111",
itemtype = "ARTICLE",
issn = "2158-5849",
url = "https://www.ingentaconnect.com/content/asp/me/2018/00000008/00000001/art00010",
doi = "doi:10.1166/mex.2018.1410",
keyword = "CAPPING LAYER, UV, RGOQDS, GRAPHENE, PHOTODETECTOR",
author = "Zhang, Enliang and Sun, Tai and Ge, Bangtong and Zhang, Weiguo and Gao, Xuan and Jiang, Hao and Li, Zhancheng and Liu, Guojun and Shen, Jun",
abstract = "Hybrid photodetector of graphene and reduced graphene oxide quantum dots (rGOQDs) is promising for deep-UV photodetection. However, these photodetectors are usually suffered from long response time and vacuum-required measurement environment. In this study, nitrogen-doped rGOQDs were
synthesized by the improved Hummers method and DMF hydrothermal treatment approach, while DMF was used as a reducing reagent to enhance the photoresponse of rGOQDs. Hybrid photodetector with rGOQDs on graphene was fabricated using Al2O3 as capping layer. High photoresponsivity
of 2.1 \texttimes 106 V/W and response time of 0.13 s were obtained at deep-UV under ambient environment, and enhanced photoresponse was observed in solar-blind wavelength compared to normal UV light. Furthermore, the integration of rGOQDs made a great improvement for graphene transistor
characteristics, with a 5-fold mobility improvement and a shift of Dirac point of 50 V. This paper provide a feasible way for the fabrication of solar-blind photodetectors with high responsivity, fast response time and ambient condition performance, which are important for the community of
photodetection.",
}