@article {Xu:2018:2158-5849:99, title = "Investigation of ultraviolet and visible persistence luminescence property of CdSiO3: Bi3+, Tb3+ phosphors", journal = "Materials Express", parent_itemid = "infobike://asp/me", publishercode ="asp", year = "2018", volume = "8", number = "1", publication date ="2018-02-01T00:00:00", pages = "99-104", itemtype = "ARTICLE", issn = "2158-5849", url = "https://www.ingentaconnect.com/content/asp/me/2018/00000008/00000001/art00009", doi = "doi:10.1166/mex.2018.1411", keyword = "VISIBLE AFTERGLOW, LUMINESCENCE PROPERTIES, CDSIO3: BI3+, TB3+, ULTRAVIOLET AFTERGLOW", author = "Xu, Yang and Yang, Zhengwen and Qiu, Jianbei and Song, Zhiguo", abstract = "The Tb3+ and Bi3+ singly doped and co-doped CdSiO3 phosphors have been prepared by high temperature solid state reaction. The ultraviolet persistence luminescence located at 363 nm from the Bi3+ and visible persistence luminescence from the Tb3+ were observed under the excitation of 234 nm in the Bi3+ and Tb3+ single doped CdSiO3 phosphors, respectively. The ultraviolet persistence luminescence from the Bi3+ and visible persistence luminescence from the Tb3+ were simultaneously obtained in the CdSiO3 phosphor co-doped with Bi3+ and Tb3+ under the excitation of 234 or 273 nm. Energy transfer from Bi3+ to Tb3+ was observed in the CdSiO3 persistence luminescence phosphor co-doped with Bi3+ and Tb3+. In the CdSiO3 phosphor co-doped with Bi3+ and Tb3+, the ultraviolet afterglow time was decreased, while the visible afterglow time was increased in comparison with these of Bi3+ and Tb3+ singly doped phosphors. The persistence luminescence mechanism is discussed.", }