Investigation of ultraviolet and visible persistence luminescence property of CdSiO₃: Bi³⁺, Tb³⁺ phosphors

The Tb³⁺ and Bi³⁺ singly doped and co-doped CdSiO₃ phosphors have been prepared by high temperature solid state reaction. The ultraviolet persistence luminescence located at 363 nm from the Bi³⁺ and visible persistence luminescence from the Tb³⁺ were observed under the excitation of 234 nm in the Bi³⁺ and Tb³⁺ single doped CdSiO₃ phosphors, respectively. The ultraviolet persistence luminescence from the Bi³⁺ and visible persistence luminescence from the Tb³⁺ were simultaneously obtained in the CdSiO₃ phosphor co-doped with Bi³⁺ and Tb³⁺ under the excitation of 234 or 273 nm. Energy transfer from Bi³⁺ to Tb³⁺ was observed in the CdSiO₃ persistence luminescence phosphor co-doped with Bi³⁺ and Tb³⁺. In the CdSiO₃ phosphor co-doped with Bi³⁺ and Tb³⁺, the ultraviolet afterglow time was decreased, while the visible afterglow time was increased in comparison with these of Bi³⁺ and Tb³⁺ singly doped phosphors. The persistence luminescence mechanism is discussed.