Investigation of ultraviolet and visible persistence luminescence property of CdSiO3: Bi3+, Tb3+ phosphors
The Tb3+ and Bi3+ singly doped and co-doped CdSiO3 phosphors have been prepared by high temperature solid state reaction. The ultraviolet persistence luminescence located at 363 nm from the Bi3+ and visible persistence luminescence from the Tb3+ were observed under the excitation of 234 nm in the Bi3+ and Tb3+ single doped CdSiO3 phosphors, respectively. The ultraviolet persistence luminescence from the Bi3+ and visible persistence luminescence from the Tb3+ were simultaneously obtained in the CdSiO3 phosphor co-doped with Bi3+ and Tb3+ under the excitation of 234 or 273 nm. Energy transfer from Bi3+ to Tb3+ was observed in the CdSiO3 persistence luminescence phosphor co-doped with Bi3+ and Tb3+. In the CdSiO3 phosphor co-doped with Bi3+ and Tb3+, the ultraviolet afterglow time was decreased, while the visible afterglow time was increased in comparison with these of Bi3+ and Tb3+ singly doped phosphors. The persistence luminescence mechanism is discussed.
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Document Type: Short Communication
Publication date: February 1, 2018
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